hemts
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例句
In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures.
在一个方面,在制备HEMT时可以利用选择性的氟离子注入来产生增强背势垒的结构。
Relation between breakdown voltage and current collapse in GaN FP-HEMTs
中击穿电压与电流崩塌的关系