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例句
Optical properties of InGaN with different indium content have been systematically studied by temperature dependent photoluminescence (PL).
主要内容包括:利用光致发光谱研究了不同组分铟镓氮材料的光学特性。
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
脊形InGaN激光器的温度分布及其对器件特性的影响
Structure and Luminescence Properties of Multi-sheet InGaN Quantum Dots Grown by Passivation-low-temperature Method
钝化低温法生长多层InGaN量子点的结构和光学特性
Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers
InGaN量子阱激光器增益和阈值电流的理论计算