nitride
美 ['naɪtraɪd] 
英 ['naɪtraɪd]
词形变化
复数：nitrides
英汉解释
英英解释
例句
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
Paradoxically, wurtzite boron nitride 's hardness appears to come from the flexibility of the bonds between the atoms that make it up.
令人意想不到的是，纤锌矿型氮化硼的惊人硬度居然源自原子间富于弹性的键。
A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.
提出了氮化物表面强极化电荷产生薄吸附层形成的二维表面态新模型。
These membranes are made of three layers of a conducting material, titanium nitride, separated by insulating layers of silica.
这些膜结构由3层导电材料氮化钛构成，它们被绝缘的二氧化硅层隔开。
An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.
在该氮化硅层和碳化硅层表面之间可以有氧化物。
The surface coating of titanium coating, coating, coating, nitriding, chromium nitride coating.
本色，镀钛涂层，氮化涂层，氮化铬涂层。
The result was a composite that was able to withstand twice as much pressure as unalloyed silicon nitride.
结果就是形成一种混合物，可以承受多于没有加入碳单原子层的氮化硅一倍的压力。
The surface layer obtained was composed of the bcc nitride of tantalum instead of orthorhombic oxide.
膜层物相由钽的氧化物变为氮化物。
The common ceramic used for SKF bearing rings and rolling elements is a bearing grade silicon nitride material .
常用于SKF轴承套圈和滚动体的陶瓷材料是轴承级的氮化硅材料。
Aluminium nitride Dutch astronomers have been closely involved in developing ALMA in a fruitful collaboration with nanotechnologists.
荷兰天文学家也与纳米技术人员在ALMA研制方面进行了富有成效的合作。
Iron nitride was obtained by the mixing technology with laser and plasma beams nitriding coaxially on the surface of iron in atmosphere.
采用激光和氮等离子体混合方法在大气气氛下对铁样品表面进行处理，获得了铁氮化合物表层。
The invention discloses a method for preparing a self-supporting substrate of a flawless nitride semiconductor and specific device thereof.
本发明公开了一种能够制备无裂的氮化物半导体自支撑衬底的方法及其专用设备。
A trademark used for an abrasive of boron nitride granules.
氮化硼用于一种由氮化硼微粒组成的磨料的商标
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
Titanium nitride has been widely used as tools material, structural and special materials dus to its outstanding characteristics.
氮化钛由于其优异特性，已在工具材料、结构材料及特殊材料中广泛应用。
Iodine was found to be crucial for the formation of the silicon nitride nanomaterials at a relative low temperature. 2.
发现碘在我们低温制备氮化硅纳米材料的过程中起着关键的作用。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide.
以及在该栅极氧化层图案、该金属氮化层图案和该硅化物的侧面上的间隔物。
Since coefficients of thermal expansion between aluminum nitride and silicon are near, large thermal stress will not be introduced.
氮化铝的热膨胀系数与硅的十分接近，因此不会引入大的热应力。
The rolling contact fatigue life and wear life of Silicon nitride ceramic balls are determined by critical stress in a way.
氮化硅陶瓷球临界应力在很大程度上决定其滚动接触疲劳和磨损寿命。
Sintering aids were one of key factors affecting microstructure and properties of silicon nitride ceramics.
烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。
The novel application of silicon nitride to this application allows thin repair layers to be grown.
将氮化硅应用于此的新颖的应用可形成薄的修补层。
The excellent properties of Polycrystalline Cubic Boron Nitride (PCBN)and its application fields are outlined firstly.
首先介绍了聚晶立方氯化硼（PCBN）刀具的优异性能及其应用领域。
and finally changing the air pressure of a growth chamber to grow a gallium nitride layer.
最后改变生长室气压，生长一层氮化镓层。
Telescopic, fully adjustable spring preload, rebound and compression damping. Titanium-Nitride coated stanchions .
伸缩，完全可调弹簧预紧力，反弹和压缩阻尼。钛氮化物涂层支柱。
Gallium nitride single crystal is grown using flux 8 containing at least sodium metal.
通过使用至少含有钠金属的助熔剂8生长氮化镓单晶。
Instead of a beam, they fashioned a tiny diving board of aluminum nitride plated with aluminum that vibrated by getting thinner and thicker.
研究者们利用一块镀铝的氮化铝微小跳板代替了光束，跳板上的铝层通过变薄和变厚来进行振动。
ZETA potential of the bath showed that: nano composite coating is superior to aluminum nitride aluminum nitride composite coating micron.
镀液ZETA电位研究表明：纳米氮化铝复合镀性能优于微米级氮化铝复合镀。
The microwave synthesis approach was applied to the preparation of manganese nitride from metal manganese.
以金属锰为原料应用微波能高温合成技术进行了氮化锰的合成。
It was important for the synthesis of boron nitride crystals with the existence of Cl-.
氯离子对于水热法制备出氮化硼微晶具有非常明显的影响。
It manifests that the compound layercomprises of chromium nitride layer on the top, inner nitride diffusion layer, and interior substrate.
复合层主要为：表层铬氮合金层，其次为扩散层，心部为基体。
The invention discloses a method for applying a silicon nitride film layer on the su*ce of a piston ring.
本发明公开了一种活塞环表面涂覆氮化硅膜层的方法。
This invention discloses a method for producing silicon nitride nanometer rod by utilizing sulfur auxiliary reaction at low temperature.
本发明公开了一种利用硫辅助反应低温制备氮化硅纳米棒的方法。
The method also comprises a step of adopting isotropic ingredient to clean the exposed part of the silicon nitride.
所述方法还包括采用各向同性的成分清洁所述氮化硅的暴露部分的步骤。
Under insufficient lubrication conditions there is no smearing between silicon nitride and steel .
在润滑不充分的条件下，氮化硅和钢之间不会发生沾污。
The results show that the compound layer is composed of titanium sulfide, titanium nitride, interlayer and substrate.
结果表明：复合渗层由钛的硫化物、钛的氮化物、过渡层及基体组成。
Finally, nano-powders of titanium nitride, titanium dioxide, copper oxides and zinc oxide were produced by electrical explosion of wires.
并利用电爆丝法制备了氮化钛、二氧化钛、铜氧化物和氧化锌的纳米粉体。
The other substrate is curved by the presence of a silicon nitride layer.
另一衬底通过存在氮化硅层而弯曲。
and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks.
以及在未被掩模覆盖的区域中生长氮化物基III-V族化合物半导体层。
We obtained rods, flakes, spheres, porous aluminum nitride by control of synthesis conditions, respectively.
实验中通过控制条件得到了棒状、片状、球状和多孔形貌的氮化铝粉末。
